書誌事項
- タイトル別名
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- Variation in the Preferred Orientations of TiN Thin Films Prepared by Ion-Beam-Assisted Deposition.
- イオンビーム シエン ジョウチャクホウ ニ ヨル TiN ハクマク ノ ハイコウ セイギョ
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抄録
Variation in the preferred orientations of Titanium Nitride (TiN) thin films with various experimental conditions (N/Ti transport ratios, N ion incident angles, film thickness and substrate temperature) were investigated. These films were formed on Silicon (100) wafers by ion-beam-assisted deposition with the nitrogen ion energies of I keV. The preferred orientation of TiN films changed from (111) to (200) as the N/Ti transport ratios and the ion incident angles increased. It is considered that this phenomenon is caused by the selective damage of crystal growth due to the energy of bombarding particles. On the other hand, the increase of film thickness led the preferred orientation of the TiN (200) film to (200) plus (220) orientation. Furthermore, this orientation changed to (200) again with the heating of the substrate during film preparation. It is considered that these phenomena are caused by the minimization process of the overall energy. So, the heating of the substrate is useful for synthesize of thick TiN (200) films.
収録刊行物
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- 精密工学会誌
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精密工学会誌 65 (9), 1340-1344, 1999
公益社団法人 精密工学会
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詳細情報 詳細情報について
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- CRID
- 1390282679741451648
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- NII論文ID
- 110001372731
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- NII書誌ID
- AN1003250X
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- ISSN
- 1882675X
- 09120289
- http://id.crossref.org/issn/09120289
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- NDL書誌ID
- 4847063
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
