A 128 Kb HfO<sub>2</sub> ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement

DOI Web Site 参考文献15件
  • Chen Chengying
    Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
  • Sun Hongbin
    School of Electrical and Information Engineering, Xi’an Jiaotong University
  • Shen Haihua
    School of Computer and Control Engineering, University of Chinese Academy of Sciences
  • Zhang Feng
    Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences

書誌事項

公開日
2016
DOI
  • 10.1587/elex.13.20160061
公開者
一般社団法人 電子情報通信学会

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説明

A 128 Kb HfO2 Resistive Random Access Memory (ReRAM) chip is developed based on HHNEC 0.13 µm 1P8M CMOS process. ReRAM is suffering the write yield problem due to the tail-bit issues and large resistance variations at high temperature. In this paper a novel Double-Reference and Dynamic-Tracking Write (DR-DTW) scheme and a Dynamic read scheme are proposed to fix these issues. The experiment results show that the tail-bit issues are almost eliminated and the write yield is improved greatly compared with traditional write scheme.

収録刊行物

  • IEICE Electronics Express

    IEICE Electronics Express 13 (6), 20160061-20160061, 2016

    一般社団法人 電子情報通信学会

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