Characterization of SiC:H films deposited using HMDS precursor with C2H2 dilution gas by remote PECVD system
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- CHO Sung Hyuk
- Department of Ceramic Engineering, Yonsei University
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- CHOI Doo Jin
- Department of Ceramic Engineering, Yonsei University
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Amorphous SiC:H films were deposited on (100) silicon wafer by remote-Plasma Enhanced Chemical Vapor Deposition system in the temperature range of 400°C-450°C. Hexamethyldisilane (HMDS) and C2H2 gas were used as a precursor and a dilution gas, respectively. The lower deposition temperature and lower sp3/sp2 carbon bonding ratio made lower dielectric constant.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 117 (1365), 558-560, 2009
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680260208384
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- NII論文ID
- 10025967451
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- NII書誌ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL書誌ID
- 10214866
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
