Measurements of emissivity behaviors of silicon semiconductor wafers

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  • Si半導体ウエハの放射率挙動の測定
  • Si ハンドウタイ ウエハ ノ ホウシャリツ キョドウ ノ ソクテイ

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Abstract

Temperature measurement is important in many semiconductor processes such as Rapid Transient Annealing, Thermal Oxidation and Chemical Vapor Deposition. Spectral emissivities of silicon wafers vary widely, thus it is difficult to apply radiation thermometry to these processes. Goal of this research is to develop radiation thermometry that can compensate emissivity change. In order to achieve the purpose, emissivity behaviors of wafers were measured from the view points of spectral, directional and polarized characteristics. In this paper, newly developed experimental apparatuses are described in detail and some examples of emissivity measurements are introduced.

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