Electron beam exposure Characteristic of negative electron beam resist (HSQ)

DOI

Bibliographic Information

Other Title
  • ネガ型電子ビームレジスト(HSQ)の電子ビーム露光特性

Description

Hydrogen Silsesquioxane (HSQ) was used as the negative electron beam (EB) resist. Tetramethyl ammonium hydroxide (TMAH) was used as developer. The characteristics of the developed height by changing exposure condition (accelerating voltage and dose) and development condition were examined. When the high concentration of TMAH was used as a developer, the developing time was shortened; moreover, nano–order patterns were obtained in low EB dose. Using HSQ and the high concentration TMAH developer, 40–nm–line width negative tone patterns were obtained. Furthermore, using this as a nanoimprint mold, 40 nm concave patterns were successfully transferred.

Journal

Keywords

Details 詳細情報について

  • CRID
    1390282680630427136
  • NII Article ID
    130005027347
  • DOI
    10.11522/pscjspe.2006s.0.323.0
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

Report a problem

Back to top