Optimization　for　thermal　oxidation　of　silicon

DOI

Bibliographic Information

Other Title
  • 酸化拡散炉による酸化膜成膜条件の最適化

Search this article

Description

<tt>The　thermal　oxidation　of　silicon　is　a　basic　process　in　micro-sensor　fabrication.　In this　study,　Quality　Engineering(Taguchi-Methods)was　applied to improve the uniformity　and　controllability　of　SiO2　thickness.　Two　Zero-point　Proportional equations　were　used　for　analyses　: (1)Y=βM　(Y:SiO2　thickness,　β　:　constant,　M　:　oxidation　time) (2)Y*=βM　(Y*:square　of　SiO2　thickness) As　a　result,　excellent　uniformity　of　SiO2　thickness　was　obtained　under　the </tt><tt>optimum　condition　when　generic function(2)Y*=βM　was　used. </tt>

Journal

Keywords

Details 詳細情報について

  • CRID
    1390282680740400384
  • NII Article ID
    130005157000
  • DOI
    10.18890/qes.7.1_43
  • ISSN
    21899320
    2189633X
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

Report a problem

Back to top