D113 A synthesis method of compound semiconductors using in-liquid plasma

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  • D113 液中プラズマプロセスを用いた化合物半導体形成法(プラズマ利用技術の進展I)

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The purpose of this study is to clear the synthesizing mechanism of the compound materials using plasma CVD method. The determination method of the chemical reaction using the values of electronegativity and ionization energy is presented. The chemical reaction between the atom that has the highest electronegativity and the atom that has the lowest ionization energy occurs with first priority. The calculated results using the method have good agreement with the experimental results of synthesizing materials such as carbon and silicon carbide. Consequently, the method is useful to synthesizing compound semiconductors using plasma CVD method.

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