Enhancement of Barrier Properties in Chemical Vapor Deposited TiN Employing Multi-Stacked Ti/TiN Structure.

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  • Chang Ting-Chang
    Department of Physics, National Sun Yat-Sen University, Taiwan, R.O.C. National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.
  • Liu Po-Tsun
    Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University,<BR> 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.
  • Yang Ya-Liang
    National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.
  • Hu Jung-Chih
    Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, R.O.C.
  • Sze Simon M.
    Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University,<BR> 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C. National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, HsinChu 300, Taiwan, R.O.C.

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抄録

A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.

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