Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model.

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  • Uematsu Masashi
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Kageshima Hiroyuki
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
  • Shiraishi Kenji
    NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

書誌事項

公開日
2000
DOI
  • 10.1143/jjap.39.l952
公開者
The Japan Society of Applied Physics

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説明

Silicon oxidation using high-pressure oxygen, where the rate shows less-than-linear dependence, is simulated based on the interfacial silicon emission model. The oxidation reaction of the emitted Si atoms in the oxide, which controls the oxidation rate at the interface, plays an important role in determining the oxidation pressure dependence. We introduce reaction terms for the oxidation in the oxide so as to fit the oxide thickness at oxygen pressures of 1–20 atm. The simulation is made using constant parameter values for oxidation reaction by changing only the oxidant solubility in the oxide in proportion to oxygen pressure.

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