Oxygen-Related Defects Introduced by As〔+〕-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams

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  • Uedono Akira
    Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
  • Muramatsu Makoto
    Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
  • Ubukata Tomohiro
    Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
  • Tanino Hirotoshi
    Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
  • Tanigawa Shoichiro
    Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
  • Nakano Akihiko
    Semiconductor Technology Academic Research Center, 16-10, Shimbashi 6-chome, Minato-ku, Tokyo 105-0004, Japan
  • Yamamoto Hidekazu
    Semiconductor Technology Academic Research Center, 16-10, Shimbashi 6-chome, Minato-ku, Tokyo 105-0004, Japan
  • Suzuki Ryoichi
    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • Ohdaira Toshiyuki
    Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • Mikado Tomohisa
    Semiconductor Technology Academic Research Center, 16-10, Shimbashi 6-chome, Minato-ku, Tokyo 105-0004, Japan

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タイトル別名
  • Oxygen-Related Defects Introduced by As+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams.
  • Oxygen-Related Defects Introduced by As<sup>+</sup>-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams

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The depth distributions and species of defects in 50 keV As+-implanted Si with a cap layer (SiO2 or SiN) were determined from measurements of the Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons. Before annealing, the main species of defects below the amorphous region was determined to be divacancies. Upon annealing at 800ºC, oxygen-related defects were introduced into the subsurface region (<20–40 nm). The species of these defects was identified as oxygen microclusters. The positrons were trapped by the open spaces adjacent to the clusters, and the size of these spaces was estimated to be close to that of monovacancies. The oxygen-related defects were annealed out after rapid thermal annealing at 1050ºC (10 s). As+-implantation through the SiN film suppressed the introduction of recoiled oxygen atoms; as a result, the concentration of the oxygen-related defects was decreased.

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