Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator.

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  • Arai Eisuke
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology
  • Iida Daisuke
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology
  • Asai Hiroshi
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology
  • Ieki Yasushi
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology
  • Uchida Hideo
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology
  • Ichimura Masaya
    Department of Electrical and Computer Engineering, Nagoya Institute of Technology

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Predeposition profiles of phosphorus (P) and boron (B) in bulk Si were measured and diffusion parameters used to simulate the profiles were extracted using a simulator. The predeposition was carried out under the condition that the surface concentration reaches the solid solubility. Applying the parameters, it was examined systematically whether experimental profiles under other conditions can be successfully simulated or not. Experimental results for both P and B diffusions show that the retardation of profiles of predeposition in SOI as compared with those in bulk Si is observed at 870°C but not at 970°C, and the retardation of profiles of drive-in diffusion in SOI is observed at 870°C in O2 atmosphere but not in N2 atmosphere and not at 970°C in both atmospheres. Comparisons of experimental profiles with simulated ones show that the simulated drive-in profiles in bulk Si and SOI are shallower than the experimental profiles at both temperatures irrespective of O2 or N2 atmosphere. This discrepancy between experimental and simulated drive-in profiles suggests that some effect that enhances drive-in diffusion exists in P and B diffusion.

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