書誌事項
- タイトル別名
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- XPS Depth Profile Analysis of ArF Immersion Resists by using C<Sub>60</Sub> Ion Beam
- ArF液浸用レジストのC60イオンビームを用いたXPS深さ方向状態解析
- ArF エキシンヨウ レジスト ノ C60 イオンビーム オ モチイタ XPS フカサ ホウコウ ジョウタイ カイセキ
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説明
Argon ion sputtering is one of the most accepted techniques for depth profiling in practical X-ray photoelectron spectroscopy (XPS) analysis, while this technique is known to cause severe degradation especially with organic materials. Sputtering system using buckminsterfullerene (C60) ion beam has recently been introduced to XPS apparatus as a new sputtering tool for depth profiling. It enables the XPS depth analysis of organic materials such as photoresists without chemical damages. In this paper, the XPS analysis using the C60 ion sputtering was applied to examine the depth distributions of a fluoropolymer in ArF immersion resists to clarify the mechanism of the water-repellency change between the co-polymer and blend polymer. In addition, the depth profiling of the resist is compared to those observed with other techniques such as angle resolved XPS analysis and XPS analysis on the gradient shaved surfaces.
収録刊行物
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- 表面科学
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表面科学 28 (7), 348-353, 2007
公益社団法人 日本表面科学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390282681434149248
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- NII論文ID
- 10019518443
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- NII書誌ID
- AN00334149
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- ISSN
- 18814743
- 03885321
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- NDL書誌ID
- 8889205
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
