Preparation of Novel Fluorosilicate Salt for Electrodeposition of Silicon at Low Temperature
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- KATAYAMA Yasushi
- Department of Applied Chemistry, Faculty of Science and Technology, Keio University
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- YOKOMIZO Masakazu
- Department of Applied Chemistry, Faculty of Science and Technology, Keio University
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- MIURA Takashi
- Department of Applied Chemistry, Faculty of Science and Technology, Keio University
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- KISHI Tomiya
- Department of Applied Chemistry, Faculty of Science and Technology, Keio University
書誌事項
- タイトル別名
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- Preparation of a Novel Fluorosilicate Salt for Electrodeposition of Silicon at Low Temperature
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<p>A novel fluorosilicate salt, 1-ethyl-3-methylimidazolium hexafluorosilicate ((EMI)2SiF6), was prepared by the reaction of EMICl and hexafluorosilicate acid aqueous solution. A transparent thin film containing silicon was deposited on a silver electrode by potentiostatic electrolysis in molten (EMI)2SiF6 at 90°C. The film was reactive against water to form silicon dioxide. (EMI)2SiF6 was found to dissolve in 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfone)imide (EMITFSI) room temperature molten salt. The same thin film was also obtained on a silver electrode by potentiostatic electrolysis in EMITFSI containing (EMI)2SiF6 at room temperature.</p>
収録刊行物
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- Electrochemistry
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Electrochemistry 69 (11), 834-836, 2001-11-05
公益社団法人 電気化学会
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詳細情報 詳細情報について
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- CRID
- 1390282752330361344
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- NII論文ID
- 10006942930
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- NII書誌ID
- AN00151637
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- ISSN
- 21862451
- 13443542
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- NDL書誌ID
- 5964266
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用可