Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process
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- OHMI Shun-ichiro
- Tokyo Institute of Technology
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- TSUKAMOTO Yuya
- Tokyo Institute of Technology
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- MAILIG Rengie Mark D.
- Tokyo Institute of Technology
抄録
<p>In this paper, we have investigated the etching selectivity of HfN encapsulating layer for high quality PtHf-alloy silicide (PtHfSi) formation with low contact resistivity on Si(100). The HfN(10 nm)/PtHf(20 nm)/p-Si(100) stacked layer was in-situ deposited by RF-magnetron sputtering at room temperature. Then, silicidation was carried out at 500°C/20 min in N2/4.9%H2 ambient. Next, the HfN encapsulating layer was etched for 1-10 min by buffered-HF (BHF) followed by the unreacted PtHf metal etching. We have found that the etching duration of the 10-nm-thick HfN encapsulating layer should be shorter than 6 min to maintain the PtHfSi crystallinity. This is probably because the PtHf-alloy silicide was gradually etched by BHF especially for the Hf atoms after the HfN was completely removed. The optimized etching process realized the ultra-low contact resistivity of PtHfSi to p+/n-Si(100) and n+/p-Si(100) such as 9.4×10-9Ωcm2 and 4.8×10-9Ωcm2, respectively, utilizing the dopant segregation process. The control of etching duration of HfN encapsulating layer is important to realize the high quality PtHfSi formation with low contact resistivity.</p>
収録刊行物
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- IEICE Transactions on Electronics
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IEICE Transactions on Electronics E102.C (6), 453-457, 2019-06-01
一般社団法人 電子情報通信学会
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詳細情報 詳細情報について
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- CRID
- 1390282763119633664
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- NII論文ID
- 130007657492
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- ISSN
- 17451353
- 09168524
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可