TCAD simulation of BTI characteristics influenced by Oxygen Vacancies in Al<sub>2</sub>O<sub>3</sub>/GeO<sub>2</sub>/Ge pMOSFET
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- Kawashima Shun
- Tokyo Univ. of Science
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- Ke Mengnan
- Tokyo Univ. of Science
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- Kawahara Takayuki
- Tokyo Univ. of Science
Bibliographic Information
- Other Title
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- TCADシミュレーションにおけるAl<sub>2</sub>O<sub>3</sub>/GeO<sub>2</sub>/Ge pMOSFETのゲート絶縁膜に存在する酸素空孔によるBTI特性の影響
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2020.2 (0), 1747-1747, 2020-08-26
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390291932617843072
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC
