Furnace Annealing Behavior of B-deped Poly-SiGe Formed on Insulating Film

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  • 角田 功
    九州大学大学院システム情報科学府電子デバイス工学専攻 : 大学院生
  • 佐道 泰造
    九州大学大学院システム情報科学研究院電子デバイス工学部門
  • 宮尾 正信
    九州大学大学院システム情報科学研究院電子デバイス工学部門

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  • Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film

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Furnace-annealing behavior of B-doped poly-SiGe on insulating films has been investigated. With increasing Ge fraction, thermal stability of electrically active B atoms at a supersaturated concentration was significantly improved, for example, the stability at 800℃ for poly-Si_<0.6>Ge_<0.4> films was nine times as high as that for poly-Si films. The deactivation process consists of the fast and slow processes. The fast process was due to sweeping out of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth by annealing. The improved thermal stability of B atoms is due to the local strain compensation by Ge doping.

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