GaP Heteroepitaxy on Si (100) Substrate by MOVPE: Effect of process parameters on Si surface reconstruction process
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- Okada Tetsuaki
- Univ. Tokyo
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- Boram Kim
- Univ. Tokyo
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- Supplie Oliver
- TU Ilmenau
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- Pasazuk Agnieszka
- TU Ilmenau
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- Hannappel Thomas
- TU Ilmenau
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- Nakano Yoshiaki
- Univ. Tokyo
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- Sugiyama Masakazu
- Univ. Tokyo
Bibliographic Information
- Other Title
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- MOVPEによるSi(100)基板上のGaP成長 : Si表面再構成プロセス条件の検討
Journal
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- JSAP Annual Meetings Extended Abstracts
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JSAP Annual Meetings Extended Abstracts 2018.1 (0), 3497-3497, 2018-03-05
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390575130486074240
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- ISSN
- 24367613
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- Text Lang
- ja
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- Data Source
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- JaLC