Evaluation Methods of Fundamental Properties and Reliabilities of Joining Materials for Power Semiconductor Devices

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  • パワー半導体実装用接合材料の基礎物性と信頼性の評価法
  • パワー ハンドウタイ ジッソウヨウ セツゴウ ザイリョウ ノ キソ ブッセイ ト シンライセイ ノ ヒョウカホウ

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Abstract

<p>We studied a method of evaluating joining materials for power semiconductor device packaging such as Ag sintering materials. For the fundamental properties, Young's modulus values were measured by three-point bending tests using joining materials deposited on thin Cu plates. Coefficients of thermal expansion were evaluated by warpage of the same samples using a Shadow Moiré measurement in an electrical furnace over a range of temperatures from 25°C to 250°C. Power cycling tests were performed using an Al plate contacted on the upper electrode of SiC diodes to avoid any effects from the other packaging materials. Electro-migration reliability tests were carried out by joining materials deposited on metalized Al2O3 substrates with high current densities.</p>

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