DRY ETCHING OF GERMANIUM WAVEGUIDES BY USING CHF_3 INDUCTIVELY COUPLED PLASMA

DOI 機関リポジトリ (HANDLE) オープンアクセス
  • Idris A. S.
    Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
  • Jiang H.
    Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
  • 浜本 貴一
    九州大学大学院総合理工学研究院

説明

A dry etching procedure to etch germanium in a CHF3 inductively coupled plasma (ICP) using a polymer based photoresist mask was developed to obtain a high selectivity ratio as well as to obtain a near vertical anisotropic sidewall etch profile. In this study, a sidewall angle of 85° with an etch rate of 190 nm/min was obtained through optimization of the ICP bias power to fabricate germanium waveguide structures with no under-cut.

収録刊行物

詳細情報 詳細情報について

  • CRID
    1390853649777299328
  • NII論文ID
    120006654736
  • DOI
    10.15017/1809224
  • ISSN
    24341436
  • HANDLE
    2324/1809224
  • 本文言語コード
    en
  • 資料種別
    conference paper
  • データソース種別
    • JaLC
    • IRDB
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用可

問題の指摘

ページトップへ