書誌事項
- タイトル別名
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- Defect Suppression by Polymer Additive in Si Microfabrication Using Metal Assisted Chemical Etching
抄録
We have developed a novel microfabrication technology applying Metal Assisted Chemical Etching. This technology makes it possible to chemically process the entire surface of Si wafer simultaneously with high productivity. When processing high aspect ratio trenches with this technology, it is important to suppress the generation of the fine-hole-shaped defects on the walls of trenches that reduce the strength of trenches. In this study, we estimated the model that the fine hole-shaped defects were caused by the Au atoms, and as a countermeasure, we added polymer additive that could inactivate Au diffusion region to the etching solution. As a result, polymer additive inhibited the dissolution of Si in Au diffusion region and suppressed the development of fine hole-shaped defects.
収録刊行物
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- Journal of Smart Processing
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Journal of Smart Processing 11 (5), 239-245, 2022-09-10
一般社団法人 スマートプロセス学会 （旧高温学会）
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詳細情報 詳細情報について
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- CRID
- 1390856583391174144
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- ISSN
- 21871337
- 2186702X
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
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- 抄録ライセンスフラグ
- 使用不可