書誌事項
- タイトル別名
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- Thin-film Silicon Growth by Plasma-enhanced CVD : Gas-phase, Surface and In-film Reactions for High-quality Film Formation
- プラズマ CVDホウ ニ ヨル シリコンケイ ハクマク ノ セイチョウ : キソウ ・ ヒョウメン ・ マク チュウ ノ ハンノウ ト ハクマク ノ コウヒンシツカ
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抄録
<p>We overview plasma-enhanced chemical vaper deposition (PECVD) of high-quality thin-film silicon. In PECVD, such a film is grown by the deposition of precursors, which is generated by the gas-phase reactions of source gases in plasma. The growth of the film depends on the surface reactions of precursors and the reactions in the growing film, i.e., in-film reactions, which influences the film structure and properties. The in-film reactions also take place after the growth, i.e., post-growth annealing. So, the reactions should be properly controlled throughout the growth and annealing for the high-quality film formation. Here, the growth kinetics and related reactions are presented for device-grade hydrogenated amorphous silicon (a-Si:H) films.</p>
収録刊行物
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- 表面と真空
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表面と真空 67 (2), 44-51, 2024-02-10
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390862080002032640
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- NII書誌ID
- AA12808657
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- ISSN
- 24335843
- 24335835
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- NDL書誌ID
- 033346026
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可
