The Dopant Diffusion Characteristics of the PH3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI
Bibliographic Information
- Other Title
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- Dopant Diffusion Characteristics of the PH3 Ion Shower Implantation ISI and RTA with Oxide Capping for SOI
- 2004 Asia-Pacific Workshop on Fundamentals and Applicat ion of Advanced Semiconductor Devices (AWAD 2004)
- 2004 Asia Pacific Workshop on Fundamentals and Applicat ion of Advanced Semiconductor Devices AWAD 2004
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Journal
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- 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報
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電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 104 (152), 17-22, 2004-06-30
東京 : 電子情報通信学会
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Keywords
Details 詳細情報について
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- CRID
- 1520009408605696640
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- NII Article ID
- 110003309093
- 110003175577
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- NII Book ID
- AA1123312X
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- ISSN
- 09135685
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- Text Lang
- en
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- NDL Source Classification
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- ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
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- Data Source
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- NDL
- CiNii Articles
