The Dopant Diffusion Characteristics of the PH3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI

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Dopant Diffusion Characteristics of the PH3 Ion Shower Implantation ISI and RTA with Oxide Capping for SOI
2004 Asia-Pacific Workshop on Fundamentals and Applicat ion of Advanced Semiconductor Devices (AWAD 2004)
2004 Asia Pacific Workshop on Fundamentals and Applicat ion of Advanced Semiconductor Devices AWAD 2004

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 104 (152), 17-22, 2004-06-30

東京 : 電子情報通信学会