Millisecond rapid thermal annealing of Si-wafer induced by high-power-density thermal plasma jet irradiation and its application to ultrashallow junction formation
書誌事項
- タイトル別名
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- Millisecond rapid thermal annealing of Si wafer induced by high power density thermal plasma jet irradiation and its application to ultrashallow junction formation
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
- 公開日
- 2009-04
- DOI
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- 10.1143/jjap.48.04c011
- 公開者
- Tokyo : The Japan Society of Applied Physics
この論文をさがす
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 48 (4), 04C011-, 2009-04
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520009409360626176
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- NII論文ID
- 40016559644
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 10210432
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDLサーチ
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