Extremely low on-resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates
書誌事項
- タイトル別名
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- Extremely low on resistance and high breakdown voltage observed in vertical GaN Schottky barrier diodes with high mobility drift layers on low dislocation density GaN substrates
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収録刊行物
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- Applied physics express : APEX
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Applied physics express : APEX 3 (8), 2010-08
Tokyo : Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520010380601694848
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- NII論文ID
- 10026586296
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- NII書誌ID
- AA12295133
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- ISSN
- 18820778
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- NDL書誌ID
- 10793587
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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