Characteristics of Dual Polymetal(W/WNx/Poly-Si)Gate Complementary Metal Oxide Semiconductor for 0.1μm Dynamic Random Access Memory Technology
Bibliographic Information
- Other Title
-
- Characteristics of Dual Polymetal W WNx Poly Si Gate Complementary Metal Oxide Semiconductor for 0 1マイクロm Dynamic Random Access Memory Technology
Search this article
Abstract
コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌
Journal
-
- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
-
Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 39 (4B), 1969-1973, 2000-04
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1520290882284151040
-
- NII Article ID
- 110004078262
-
- NII Book ID
- AA10457675
-
- ISSN
- 00214922
-
- NDL BIB ID
- 5384336
-
- Text Lang
- en
-
- NDL Source Classification
-
- ZM35(科学技術--物理学)
-
- Data Source
-
- NDL
- CiNii Articles
