Effect of low growth rate in chemical beam epitaxy on carrier mobility and lifetime of p-GaAsN films
書誌事項
- タイトル別名
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- Effect of low growth rate in chemical beam epitaxy on carrier mobility and lifetime of p GaAsN films
- Special issue: Dry process
- Special issue Dry process
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抄録
<jats:p> Decreasing the growth rate in chemical beam epitaxy (CBE) is effective to improve the hole mobility and minority-carrier lifetime in p-GaAsN films. The hole mobility increased from 120 to 150 cm<jats:sup>2</jats:sup> V<jats:sup>-1</jats:sup> s<jats:sup>-1</jats:sup> for the N composition of 0.6%. The minority-carrier lifetime improved from 3.2×10<jats:sup>-1</jats:sup> ([N] = 0.6%) to 9.0×10<jats:sup>-1</jats:sup> ns ([N] = 0.8%) despite the higher N composition. N-related scattering centers are indicated to be the dominant scattering centers at approximately room temperature. Controlling the growth rate is considered to be effective to reduce the amount of N-related scattering centers and nonradiative recombination centers. </jats:p>
収録刊行物
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- Japanese journal of applied physics : JJAP
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Japanese journal of applied physics : JJAP 50 (8), 08KD06-, 2011-08
Tokyo : The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520290883090954240
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- NII論文ID
- 40018961095
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- NII書誌ID
- AA12295836
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 11211253
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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