A New 600V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection

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New 600V Punch Through Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p Well Voltage Detection

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 45 (10A), 7587-7591, 2006-10

Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics