Microcrystalline/amorphous thin Si films deposition by a newly developed dual injection system employing hydrogen plasma and silicon radicals at low temperature (300℃) chemical vapor deposition process
書誌事項
- タイトル別名
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- Microcrystalline amorphous thin Si films deposition by a newly developed dual injection system employing hydrogen plasma and silicon radicals at low temperature 300ドC chemical vapor deposition process
- Special issue: Solid state devices and materials
- Special issue Solid state devices and materials
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収録刊行物
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- Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP
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Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 46 (4B), 2542-2553, 2007-04
Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1520572358058337792
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- NII論文ID
- 40015349095
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- NII書誌ID
- AA10457675
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- ISSN
- 00214922
- 13474065
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- NDL書誌ID
- 8720381
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- 本文言語コード
- en
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- NDL 雑誌分類
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- ZM35(科学技術--物理学)
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- データソース種別
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- NDL
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