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Evaluation on switching characteristics of GaN HEMT and Si MOSFET+GaN HEMT cascode device
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- FUNAKI Tsuyoshi
- Osaka University
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- IKEMURA Kazuya
- Osaka University
Bibliographic Information
- Other Title
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- ノーマリーオン型GaN HEMTとノーマリーオフ型Si MOSFET+GaN HEMTカスコードデバイスのスイッチング特性評価
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Journal
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- 電気学会研究会資料. EDD, 電子デバイス研究会
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電気学会研究会資料. EDD, 電子デバイス研究会 2012 (59), 1-6, 2012-10-25
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Details 詳細情報について
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- CRID
- 1570291226228087552
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- NII Article ID
- 10031118325
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- NII Book ID
- AN1044178X
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- Text Lang
- ja
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- Data Source
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- CiNii Articles