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<Report>A Simplified Fabrication Process of Semiconductor Devices for Education
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- YOSHIMOTO Tomomi
- Department of Electronic and Information Engineering, School of Engineering, Hokkaido Tokai University
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- YAMAZAKI Masayoshi
- Academic Affairs Section, Hokkaido Tokai University
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- IWATA Tatsuo
- Department of Electronic and Information Engineering, School of Engineering, Hokkaido Tokai University
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- SAKATA Toshimichi
- Department of Electronic and Information Engineering, School of Engineering, Hokkaido Tokai University
Bibliographic Information
- Other Title
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- <調査報告>学生実習向けに簡単化された半導体デバイス製作プロセス
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Description
A simplified fabrication process of p-MOSFET was developed for classroom use by undergraduate students. The process contains almost all elemental manufacturing procedures of an integrated circuit (IC), but only four days are required to complete the course. Since annealing and boiling with acid are omitted and a diffusion layer is formed by the solid diffusion source, a very high degree of safety is possible.
Journal
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- Proceedings of Hokkaido Tokai University. Science and engineering
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Proceedings of Hokkaido Tokai University. Science and engineering 3 173-176, 1991-03-20
Hokkaido Tokai University
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Details 詳細情報について
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- CRID
- 1570291226874722432
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- NII Article ID
- 110000471983
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- NII Book ID
- AN10120935
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- ISSN
- 09162097
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- Text Lang
- ja
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- Data Source
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- CiNii Articles