ITO films deposition examine with low temperature by sputtering

13 References
  • OHKI R.
    Faculty of Engineering, Tokyo Institute of Polytechnics
  • HOSHI Y.
    Faculty of Engineering, Tokyo Institute of Polytechnics

Bibliographic Information

Other Title
  • スパッタ法によるITO薄膜の低温成膜法の検討

Search this article

Description

ITO thin films were deposited on acryl substrate by using a facing targets sputtering system. The films with a resistivity as low as 5×10^<-4>Ωcm were obtained by the sputtering, even if the sputtering voltage was higher than 500 V. An rf-dc coupled magnetron sputtering system was also used to deposit the film at a sputtering voltage below 100V. The resistivity of the film deposited by the magnetron sputtering decreased steeply as the sputtering voltage decreases from 300 V to 100 V, and the minimum resistivity was as low as 5×10^<-4>Ωcm. The smoothness of the film surface was also significantly improved by decreasing the sputtering voltage. These results indicate that the bombardment of high energy oxygen atoms to the film surface should be suppressed to obtain a film with low resisitivity.

Journal

References(13)*help

See more

Keywords

Details 詳細情報について

  • CRID
    1570291227422775680
  • NII Article ID
    110003199301
  • NII Book ID
    AN10012932
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

Report a problem

Back to top