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Fabrication of InAlAs/InGaAs MSM Photodetectors on Si substrates
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- Sasaki Toru
- NTT Opto-Electronics Laboratories
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- Enoki Takatomo
- NTT LSI Laboratories
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- Tachikawa Masami
- NTT LSI Laboratories
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- Sugo Mitsuru
- NTT LSI Laboratories
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- Mori Hidefumi
- NTT LSI Laboratories
Bibliographic Information
- Other Title
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- Si上ヘテロエピタキシャル成長InAlAs/InGaAs MSM受光素子の作製
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Description
InAlAs, InGaAs Metal-Semiconductor- Metal (MSM) photodiodes (PDs) were fabricated on Si substrates.It is shown that dark currents of 10^-8> A and responsivity of 0.1 A/W can be achieved for MSM- PDs on Si substrates.These characteristices are comparable to those of the devices with the same structures on InP substrates. MSM on Si shows the following pulse resonses:rise time of 30-150ps, fall time of 300-700 ps,and full width at half maximum of 150-600 ps.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 93 (168), 39-44, 1993-07-26
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1570572702403218560
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- NII Article ID
- 110003200329
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles