Fabrication of InAlAs/InGaAs MSM Photodetectors on Si substrates

Bibliographic Information

Other Title
  • Si上ヘテロエピタキシャル成長InAlAs/InGaAs MSM受光素子の作製

Search this article

Description

InAlAs, InGaAs Metal-Semiconductor- Metal (MSM) photodiodes (PDs) were fabricated on Si substrates.It is shown that dark currents of 10^-8> A and responsivity of 0.1 A/W can be achieved for MSM- PDs on Si substrates.These characteristices are comparable to those of the devices with the same structures on InP substrates. MSM on Si shows the following pulse resonses:rise time of 30-150ps, fall time of 300-700 ps,and full width at half maximum of 150-600 ps.

Journal

Details 詳細情報について

  • CRID
    1570572702403218560
  • NII Article ID
    110003200329
  • NII Book ID
    AN10012954
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

Report a problem

Back to top