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Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas (Hydrogen Azide)
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- Ishihara Ryouichi
- Department of Physical Electronics, Tokyo Institute of Technology
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- Kanoh Hiroshi
- Department of Physical Electronics, Tokyo Institute of Technology
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- Sugiura Osamu
- Department of Physical Electronics, Tokyo Institute of Technology
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- Matsumura Masakiyo
- Department of Physical Electronics, Tokyo Institute of Technology
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Description
Silicon nitride films were deposited at temperatures as low as 350°C by chemical vapor deposition using a new source gas, hydrogen azide (HN3). Silicon nitride film deposited at 425°C was nitrogen-rich and showed hydrogen content of about 28 atomic%. The breakdown field strength was as high as 8.7 MV/cm and the resistivity was as high as 1015 Ω·cm. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transistor characteristics.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 31 (2), L74-L77, 1992
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1570572703213999616
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- NII Article ID
- 130003472520
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles
