Observation of Sinative oxide growth using FT-IR-ATR and FT-IR-RAS

Bibliographic Information

Other Title
  • FT-IR-ATR,FT-IR-RASを用いたSi自然酸化膜成長過程の観察

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Description

The very early stage of Si native oxide growth on an atomically flat Si(111)surface in pure water was observed using Fourier- transform Infrared Attenuated Total Refflection Spectroscopy(FT-IR- ATR)and Fourier-transform Infrared Reflection Absorption Spectroscopy(FT-IR-RAS).We measured the Si-H signal by FT-IR-ATR and measured the Si-O signal by FT-IR-RAS.The change in the Si-H signal showed that oxidation did not start at the step edge of the Si surface.RAS spectra of the oxidized surface was explained as precipitated oxide particles in the thin surface Si layer.This suggests that native oxide was not growing layer-by-layer.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 93 (7), 43-50, 1993-04-22

    The Institute of Electronics, Information and Communication Engineers

Keywords

Details 詳細情報について

  • CRID
    1570854177467475968
  • NII Article ID
    110003309927
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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