Effect of Cl2 Addition to O2 Plasma on RuO2 Etching : Quarter micron size dry etching of RuO2 thin films for Gb DRAMs

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Bibliographic Information

Other Title
  • RuO2ドライエッチングにおける塩素添加効果 : 導電性酸化膜から成るGbクラスDRAM容量電極の微細加工方法

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Description

We investigated the dry etching characteristics of RuO2 films. It is found that a small addition of chlorine to an oxygen plasma causes an marked enhancement of the RuO2 etching rate. In this sutdy, the phenomena as mentioned above will be described and discussed in detail. Futhermore, we show the fabrication of RuO2 electrodes for high dielectric constant thin film capacitors for 1Gb DRAM.

Journal

  • Technical report of IEICE. SDM

    Technical report of IEICE. SDM 95 (206), 43-50, 1995-08-17

    The Institute of Electronics, Information and Communication Engineers

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Keywords

Details 詳細情報について

  • CRID
    1571417127419442816
  • NII Article ID
    110003309795
  • NII Book ID
    AN10013254
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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