Control of Reaction Mechanism of Photochemical Vapor Deposition of Aluminum Film by Timing of Source Introduction
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- Sahara Kouji
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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- Ouchi Hideki
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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- Hanabusa Mitsugu
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
Description
In photochemical vapor deposition of aluminum film using dimethyaluminum hydride (DMAH) under illumination of a deuterium lamp, a photolytic reaction became dominant when silicon wafer was exposed to DMAH at room temperature prior to substrate heating to 230°C for deposition, while only a pyrolytic reaction took place when DMAH was introduced after the substrate was heated to 230°C. A scanning tunneling microscope study showed formation of Al islands in high density with the DMAH exposure, while well-isolated islands were revealed without the initial exposure. Activation sites created by chemisorption may be responsible for the observed effects.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 30 (7), 1545-1548, 1991
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1572543028050847488
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- NII Article ID
- 130003471025
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- ISSN
- 00214922
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- Text Lang
- en
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- Data Source
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- CiNii Articles