Control of Reaction Mechanism of Photochemical Vapor Deposition of Aluminum Film by Timing of Source Introduction

J-STAGE
  • Sahara Kouji
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology
  • Ouchi Hideki
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology
  • Hanabusa Mitsugu
    Department of Electrical and Electronic Engineering, Toyohashi University of Technology

説明

In photochemical vapor deposition of aluminum film using dimethyaluminum hydride (DMAH) under illumination of a deuterium lamp, a photolytic reaction became dominant when silicon wafer was exposed to DMAH at room temperature prior to substrate heating to 230°C for deposition, while only a pyrolytic reaction took place when DMAH was introduced after the substrate was heated to 230°C. A scanning tunneling microscope study showed formation of Al islands in high density with the DMAH exposure, while well-isolated islands were revealed without the initial exposure. Activation sites created by chemisorption may be responsible for the observed effects.

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