Characterization of Strained InGaAs/GaAs Structures using Spectroscopic Ellipsometry
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- Watanabe Yukimune
- Faculty of Technology,Tokyo University of Agriculture and Technology
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- Saitoh Tadashi
- Faculty of Technology,Tokyo University of Agriculture and Technology
Bibliographic Information
- Other Title
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- 分光エリプソメトリーによるInGaAs/GaAs系歪構造の評価
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Description
For development of III-V compound semiconductor devices,it is important to characterize the structures nondestructively.In this work,spectroscopic ellipsometry is applied to characterize strained and relaxed InGaAs.The measured complex refractive indices of the strained InGaAs on GaAs substrates are consistent with the theoretical values.Using these complex refractive indices, thicknesses and compositions for the strained GaAs, InGaAs/GaAs structures can be characterized.
Journal
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- IEICE technical report. Electron devices
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IEICE technical report. Electron devices 93 (326), 43-47, 1993-11-19
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1573668927146322432
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- NII Article ID
- 110003200449
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- NII Book ID
- AN10012954
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- Text Lang
- ja
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- Data Source
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- CiNii Articles
