Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation

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Bibliographic Information

Other Title
  • 深いボロンイオン注入による自己バイアスチャネルダイオードの耐圧改善

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Description

We have previously proposed a DMOS self-biased channel diode incorporating a self-bias effect in a channel diode with three-terminal operation. The proposed diode exhibits good characteristics with low loss and resistance to thermal runaway. However, since it does not have a body-shorted structure, an improved breakdown voltage is deemed necessary. In the present study, we investigated the effects of additional impurity profiling by self-aligned deep implantation of boron ions with a peak density of 7×10^<19>/cm^3 in the double-diffusion impurity region on the anode side of the device. In 3D device simulations, this was shown to provide a breakdown voltage of -27.2(V), an improvement of approximately 13(V) from the value of -14.7(V) obtained with the ordinary double-diffusion structure, without adversely affecting the forward characteristics.

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Details 詳細情報について

  • CRID
    1573668927652276480
  • NII Article ID
    110009636576
  • NII Book ID
    AN10013108
  • Text Lang
    ja
  • Data Source
    • CiNii Articles

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