Metal ion beam self-sputter deposition system
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説明
<jats:p>A metal ion beam self-sputter deposition system, which requires no gas feeding, has been developed for film preparation under ultrahigh vacuum. A copper ion beam extracted from a liquid metal ion source is focused by an asymmetric lens system to impinge on the target which is made of the same material as the ion species. Deposition could be done under a pressure of 10−5Pa and the deposition rate of 2.5 nm/min at maximum was achieved. Crystallinity, impurity incorporation, and electrical properties of the deposited copper films were evaluated by x-ray diffraction, Rutherford backscattering spectrometry, particle induced x-ray emission, and a four point probe. The film properties were dominated by the deposition rate, and no significant dependence of the primary ion energy on the film properties was observed. The films with the resistivity of as low as 2.1μΩcm could be obtained at higher deposition rate.</jats:p>
収録刊行物
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- Review of Scientific Instruments
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Review of Scientific Instruments 67 1996-1999, 1996-05-01
AIP Publishing