38.3: High Selectivity Photoresist Ashing by the Addition of NH<sub>3</sub> to CF<sub>4</sub>/O<sub>2</sub> or CHF<sub>3</sub>/O<sub>2</sub>
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説明
<jats:title>Abstract</jats:title><jats:p>A low temperature and high selectivity ashing process using CF<jats:sub>4</jats:sub>/O<jats:sub>2</jats:sub> downfiow plasma in TFT‐LCD fabrication was developed. Reaction products were formed on the underlying a‐Si:H with the addition of NH<jats:sub>3</jats:sub> gas to CF<jats:sub>4</jats:sub>/O<jats:sub>2</jats:sub>plasma. These products obstructed the etching of a‐Si:H films by F radicals, therefore the selectivity increased.</jats:p>
収録刊行物
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- SID Symposium Digest of Technical Papers
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SID Symposium Digest of Technical Papers 30 844-847, 1999-05-01
Wiley