A new working principle of ferroelectric gate FET memory with an additional electrode

説明

Reported a new operating principle of ferroelectric gate FET memory. With an intermediate electrode inserted between a ferroelectric capacitor and a MIS-FET, the memory has potential to solve problems of short retention time, high operation voltage and instability performance of conventional ferroelectric gate FET memory. The memory was experimentally and theoretically investigated and was verified to be practicable.

収録刊行物

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