Ultra-shallow junction formed using laser annealing for sub-50 nm MOS devices
説明
Requirements for the shallow junction technology in the sub-50 nm regime have been discussed. We propose a new ultra-shallow junction formation method called as Laser Induced Atomic Layer Doping (LI-ALD). The ultra-shallow junction with the depth of less than 20 nm could be formed using LI-ALD. The NMOS transistors with the ultra shallow junction formed by LI-ALD were demonstrated in this paper.
収録刊行物
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- Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C)
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Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C) 95-98, 2002-11-14
Japan Soc. Appl. Phys