Growth and orientation of GaN epilayers on NdGaO/sub 3/ by hydride vapor phase epitaxy
説明
Growth characteristics of GaN on NdGaO/sub 3/ [011] and (101) substrates by hydride vapor phase epitaxy are investigated. The epitaxial relationship is found to be GaN(0001)/NdGaO/sub 3/ [011] with GaN [10-10]//NdGaO/sub 3/ [100] for NdGaO/sub 3/ [011] and GaN(11-24)/NdGaO/sub 3/[101] with GaN[11-2-4]//NdGaO/sub 3/ [10-1] for the NdGaO/sub 3/ [101]. When the GaN is directly grown on NdGaO3/sub /substrates around 1000/spl deg/C, no deposits of GaN are obtained due to the reduction of the NdGaO3/sub s/ substrate by the presence of NH/sub 3/ at high temperature. In order to avoid the substrate reduction, low-temperature grown GaN is effective as the protective layer.
収録刊行物
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- Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
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Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) 33-36, 2002-11-27
IEEE
